Description2SC3357NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDThe 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.It has large dynamic range and good current characteristicType Designator: 2SC3357 SMD Transistor Code: RF Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.4 W Maximum Collector-Base Voltage |Vcb|: 20 V Maximum Collector Current |Ic max|: 0.1 A Max. Operating Junction Temperature (Tj): 125 °C Transition Frequency (ft): 6500 MHz Forward Current Transfer Ratio (hFE), MIN: 40 Noise Figure, dB: – Package: SOT89Datasheet:https://www.alldatasheet.com/datasheet-pdf/view/5865/NEC/2SC3357.html
