DescriptionFeatures : Type Designator: 2SB778 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 80 W Maximum Collector-Base Voltage |Vcb|: 120 V Maximum Collector-Emitter Voltage |Vce|: 120 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 10 A Max. Operating Junction Temperature (Tj): 150 °C Forward Current Transfer Ratio (hFE), MIN: 60 Noise Figure, dB: – Package: TO218
