Description(O3407A )P-Channel Enhancement Mode Field Effect TransistorType Designator: AO3407A Marking Code: X7* Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ – Maximum Power Dissipation: 1.4 W |Vds|ⓘ – Maximum Drain-Source Voltage: 30 V |Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V |Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 2.4 V |Id|ⓘ – Maximum Drain Current: 4.3 A Tjⓘ – Maximum Junction Temperature: 150 °C Qgⓘ – Total Gate Charge: 9.2 nC trⓘ – Rise Time: 5.5 nS Cossⓘ – Output Capacitance: 100 pF Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.048 Ohm Package: SOT23datasheet :https://pl-1.org/getproductfile.axd?id=12476&filename=AO3407.pdf
