DescriptionFeatures : Type Designator: 2SB536 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 18 W Maximum Collector-Base Voltage |Vcb|: 120 V Maximum Collector-Emitter Voltage |Vce|: 110 V Maximum Emitter-Base Voltage |Veb|: 6 V Maximum Collector Current |Ic max|: 2 A Max. Operating Junction Temperature (Tj): 175 °C Transition Frequency (ft): 30 MHz Forward Current Transfer Ratio (hFE), MIN: 40 Noise Figure, dB: – Package: TO220
